Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 230V 15A TO3P

Toshiba Semiconductor and Storage

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体