Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：279.54 Kbytes 页数：7 Pages

ALLEGRO

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：221.2 Kbytes 页数：7 Pages

Sanken

三垦

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

文件：103.24 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

文件：72.03 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

双极型晶体管

硅 PNP 平面外延型三极管 ・适用于功放输出段。\n・有配对品。\n・ASO 较广。;

Sanken

三垦

音频放大晶体管 (Audio Amplification Transistor)

音频放大晶体管 (Audio Amplification Transistor)

Allegro

Trans GP BJT PNP 200V 15A 3-Pin(3+Tab) TO-3P Bulk

NJS

Package：TO-3P-3，SC-65-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 200V 15A TO3P

Sanken

三垦

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications

文件：71.67 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complement to Type 2SC6011A

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011A APPLICATIONS • Designed for audio and general purpose applications

文件：96.45 Kbytes 页数：2 Pages

ISC

无锡固电