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2SA1962

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2SA1962

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •GoodLinearityofhFE •ComplementtoType2SC5242 APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1962

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SC5242 •Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

2SA1962

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SC5242 •Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

2SA1962

PowerAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SA1962

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SA1962

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SA1962

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SA1962

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SA1962

SiliconPNPPowerTransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

2SA1962

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •GoodLinearityofhFE •ComplementtoType2SC5242 APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2SA1962-O

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SA1962OTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SA1962OTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2SA1962RTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2SA1962RTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    2SA1962-O(Q,T)

  • 功能描述:

    两极晶体管 - BJT Transistor PNP 230V 15A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
TOSHIBA
2017+
TO-3P
28562
只做原装正品假一赔十!
询价
TOSHIBA/东芝
18+
TO-3P
2000
原装现货低价销售
询价
TOSHIBA
1922+
TO-3P
9200
公司原装现货假一罚十特价欢迎来电咨询
询价
TOSHIBA/东芝
22+
TO-3P
9600
原装现货,优势供应,支持实单!
询价
TOSHIBA
22+
TO-3P
8900
英瑞芯只做原装正品!!!
询价
TOSHIBA/东芝
2023+
8700
原装现货
询价
TOSHIBA/东芝
23+
TO-3P
45000
原装正品现货 低价出售 假一赔十
询价
TOSHIBA/东芝
23+
TO3P
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
2022
TO3P
80000
原装现货,OEM渠道,欢迎咨询
询价
Toshiba
23+
TO-3P
6680
全新原装优势
询价
更多2SA1962-O(Q,T)供应商 更新时间2024-4-28 17:31:00