Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

Features • Adoption of MBIT process • High breakdown voltage and large current capacity

文件：609.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：A1770；Package：NMP；High-Voltage Switching Applications

文件：515.169 Kbytes 页数：7 Pages

SANYO

三洋

Package：SC-71；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 160V 1.5A 3NMP

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件：515.169 Kbytes 页数：7 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Small and slim package permitting • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC4614 APPLICATIONS • High voltage switching application

文件：275.01 Kbytes 页数：3 Pages

ISC

无锡固电

High-Voltage Switching Applications

PNP/NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • High breakdown voltage and large current capacity

文件：116.25 Kbytes 页数：4 Pages

SANYO

三洋