SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

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NEC

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isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Thi

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ISC

无锡固电

SILICON POWER TRANSISTOR

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RENESAS

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1647 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor dri • Available for high-current control in small dimension\n• Z type is a lead processed product and is deal for mounting a hybrid IC.\n• Low collector saturation voltage: VCE(sat)1 = −0.3 V MAX. (IC = −3.0 A)\n• Fast switching speed: tf = 0.4 μs MAX. (IC = −3.0 A)\n• High DC current gain and excellent;

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