PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

文件：88.29 Kbytes 页数：2 Pages

SANYO

三洋

Silicon PNP epitaxial planer type

For low-frequency amplification ■Features •Low collector-emitter saturation voltage VCE(sat) •Optimum for low-voltage operation and for converters •Allowing supply with the radial taping •Optimum for high-density mounting

文件：37.15 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

文件：112.79 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

文件：200.39 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

文件：146.63 Kbytes 页数：3 Pages

SAVANTIC

High-voltage Amplifier Transistor

High-voltage Amplifier Transistor Features High breakdown voltage.

文件：36.31 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：RR；Package：SOT-346；High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.

文件：79.69 Kbytes 页数：4 Pages

ROHM

罗姆

PNP Plastic Encapsulated Transistor

FEATURES Low Collector-Emitter Saturation Voltage Low Transition Frequency

文件：83.93 Kbytes 页数：1 Pages

SECOS

喜可士

丝印：A1515；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

文件：1.42793 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：A1515S；Package：SPT/SC-72；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：128.6 Kbytes 页数：4 Pages

ROHM

罗姆