PNP Silicon Transistor

■Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z

文件：41.63 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o

文件：373.8 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Switching Applications

Features ● Adoption of FBET Process ● High Breakdown Voltage (VCEO = 160V) ● Excellent Linearlity of hFE and Small Cob ● Fast Switching Speed

文件：412.38 Kbytes 页数：3 Pages

KEXIN

科信电子

High-Voltage Switching Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.

文件：96.58 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

High-Voltage Switching, Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.

文件：108.68 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

文件：358.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

文件：124.38 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time ● Complementary to 2SC3646

文件：509.48 Kbytes 页数：3 Pages

KEXIN

科信电子

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

文件：358.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

文件：358.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体