High-Voltage Switching Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.

文件：96.58 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

High-Voltage Switching, Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.

文件：108.68 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage Switching Applications

Features ● Adoption of FBET Process ● High Breakdown Voltage (VCEO = 160V) ● Excellent Linearlity of hFE and Small Cob ● Fast Switching Speed

文件：412.38 Kbytes 页数：3 Pages

KEXIN

科信电子

High-Voltage Switching Predriver Applications

ONSEMI

安森美半导体

PNP Transistors

文件：1.39007 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.40834 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.39007 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.40834 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.39007 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Transistors

文件：1.40834 Mbytes 页数：3 Pages

KEXIN

科信电子