PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications( with Bias Resistor) Features With bias resistor (R1 = 47kΩ , R2 = 47kΩ) Use Switching circuit, inverter circuit, interface circuit, driver circuit

文件：94.71 Kbytes 页数：2 Pages

SANYO

三洋

TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SC3665.

文件：151.64 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High hFE: hFE= 100 to 320 • 1-W output applications • Complementary to 2SC3666.

文件：151.91 Kbytes 页数：2 Pages

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3668

文件：196.83 Kbytes 页数：3 Pages

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3669.

文件：195.72 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Amplifier Applications Driver-Stage Amplifier Applications

文件：124.39 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications Driver-Stage Amplifier Applications

文件：136.89 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications Driver-Stage Amplifier Applications

文件：124.39 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications Driver-Stage Amplifier Applications

文件：136.89 Kbytes 页数：4 Pages

TOSHIBA

东芝