TRANSISTOR (POWER AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS

Power Amplifier Applications High-Speed Switching Applications • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.)

文件：208.13 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier

文件：33.23 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

文件：88.55 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

文件：161.41 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

文件：94.95 Kbytes 页数：3 Pages

SAVANTIC

High Voltage Control Applications

Features • High Voltage: VCBO = -300V , VCEO = -300V • Low Saturation Voltage: VCE(sat) = -0.5V (max) • Small Collector Output Capacitance: Cob = 6pF • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SC3515

文件：728.09 Kbytes 页数：4 Pages

KEXIN

科信电子

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER , CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.)

文件：268.29 Kbytes 页数：5 Pages

TOSHIBA

东芝

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

文件：235.82 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC= -2A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

文件：289.15 Kbytes 页数：2 Pages

ISC

无锡固电