| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2SA1241 | TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076 文件：184.65 Kbytes 页数：4 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | Power Amplifier Applications Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076 文件：189 Kbytes 页数：5 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076 文件：189 Kbytes 页数：5 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | 丝印：A1241；Package：SC-64；Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 页数：73 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：322.29 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | |
2SA1241 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：303.23 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | |
2SA1241 | Power Amplifier Applications Power Switching Applications 文件：197.33 Kbytes 页数：5 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 文件：189 Kbytes 页数：5 Pages | TOSHIBA 东芝 | TOSHIBA | |
2SA1241 | Power transistor for high-speed switching applications Application Scope：Power amplifier\nPolarity：PNP\nComplementary Product：2SC3076\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -2 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO -50 V ; | Toshiba 东芝 | Toshiba | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications 文件：322.29 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC |
技术参数
- Polarity：
PNP
- Features：
Low Satulation Voltage
- VCEO(Max)(V)：
-50
- IC(Max)(A)：
-2
- hFE(Min)：
70
- hFE(Max)：
240
- VCE(sat)(Max)(V)：
-0.5
- fT(Typ.)(MHz)：
100
- ComplementaryProduct：
2SC3076
- Comments：
Rank is specified by hFE range.
- Number of pins：
3
- Surface mount package：
Y
- Package name：
New PW-Mold
- Width×Length×Height(mm)：
6.5 x 9.5 x 2.3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOS |
24+ |
DIPSMD |
450 |
询价 | |||
东芝 |
24+ |
TO-251 |
5000 |
只做原装公司现货 |
询价 | ||
TOS |
25+23+ |
TO252 |
73787 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
TOSHIBA/东芝 |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
三洋 |
24+ |
TO-251/252 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TOSHIBA |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TOSHIBA/东芝 |
23+ |
SOT252 |
95000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
TOSHIBA |
20+ |
TO-252 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TOSHIBA/东芝 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 |
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