Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

文件：34.6 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

文件：180.96 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

文件：89.44 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

文件：94.43 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 ■Features ● Low noise characteristics. ● High foward current transfer ratio hFE .

文件：37.15 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SA1127 ■Features •Low noise voltage NV •High forward current transfer ratio hFE

文件：38.51 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP epitaxial planer type

For low-frequency output amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Optimum for low-voltage operation and for converter circuits.

文件：36.84 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

文件：95.26 Kbytes 页数：3 Pages

ISC

无锡固电

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

文件：255.29 Kbytes 页数：8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. FEATURES • Large current capacity with small package: IC(DC)= −7.0 A • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC= −3.0 A, IB = −0.1 A • Complementary transi

文件：103.38 Kbytes 页数：6 Pages

NEC

瑞萨