2SA1091

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-0.5V(Max)@IC=-20mA APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

2SA1091

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Highvoltage,lowsaturationvoltage,smallcollectoroutputcapacitance. Applications Highvoltagecontrol,plasmadisplay,nixietubedriver,cathoderaytubebrightnesscontrolapplications.

2SA1091

HighVoltageControlApplicationsPlasmaDisplay,NixieTubeDriverApplicationsCathodeRayTubeBrightnessControlApplications

2SA1091

TRANSISTOR(HIGHVOLTAGECONTROLAPPLICATIONSPLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROL)

HighVoltageControlApplications PlasmaDisplay,NixieTubeDriverApplications CathodeRayTubeBrightnessControlApplications •Highvoltage:VCBO=−300V,VCEO=−300V •Lowsaturationvoltage:VCE(sat)=−0.5V(max) •Smallcollectoroutputcapacitance:Cob=6pF(typ.) •Compleme