Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

文件：70.03 Kbytes 页数：4 Pages

PANASONIC

松下

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min)

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

文件：109.17 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

文件：207.46 Kbytes 页数：5 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

文件：144.74 Kbytes 页数：5 Pages

SAVANTIC

Silicon PNP Power Transistor

文件：127.23 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Device - Power Transistors - Others

Panasonic

松下

Silicon PNP epitaxial planar type

For low-frequency power amplification\nComplementary to 2SC2497, 2SC2497A\n\n■ •Output of 5 W can be obtained by a complementary pair with 2SC2497 and 2SC2497A\n•TO-126B package which requires no insulation plate for installation to the heat sink;

Panasonic

松下

Package：TO-225AA，TO-126-3；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 2A TO126B-A1

PANASONIC

松下