2SA1020PT

2SA1020PT

2SA1020RLRA

OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS

OneWattHighCurrentPNPTransistor Features •Pb−FreePackagesareAvailable*

2SA1020RLRAG

OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS

OneWattHighCurrentPNPTransistor Features •Pb−FreePackagesareAvailable*

2SA1020-TA

TO-92Plastic-EncapsulateTransistors

Features Powermplifierpplications

2SA1020-TA

TO-92MODPlastic-EncapsulateTransistors

FEATURES PowerAmplifierApplications

2SA1020-Y

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

PowerAmplifierApplications PowerSwitchingApplications •LowCollectorsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SC2655

ST-2SA1020

PNPSiliconEpitaxialTransistor

PNPSiliconEpitaxialTransistor Poweramplifierapplication Powerswitchingapplication

UTC2SA1020

PNPEPITAXIALSILICONTRANSISTOR

DESCRIPTION TheUTC2SA1020isdesignedforpoweramplifierandpowerswitchingapplications. FEATURES *Lowcollectorsaturationvoltage:VCE(SAT)=-0.5V(MAX)(IC=-1A) *Highspeedswitchingtime:tSTG=1.0μs(TYP) *ComplementtoUTC2SC2655