TO-252-2L Plastic-Encapsulate Transistors

文件：747.85 Kbytes 页数：4 Pages

JIANGSU

长电科技

晶体管

JSCJ

长晶科技

PNP Silicon Epitaxial Planar Transistor

文件：117.57 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.

文件：113.95 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH CURRENT SWITCHING APPLICATION

FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562

文件：111.28 Kbytes 页数：4 Pages

UTC

友顺

TRANSISITOR (HIGH CURRENT SWITCHING APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS. ■ FEATURES * Low collector saturation voltage VCE(SAT)=-0.4V(max.) at Ic=-3A * High speed switching time: tS=1.0µs(Typ.) * Complementary to 2SC2562

文件：199.19 Kbytes 页数：3 Pages

TOSHIBA

东芝