2N7002SPT

DualN-ChannelEnhancementMOSFET

2N7002SSPT

DualN-ChannelEnhancementMOSFET

2N7002T

N-ChannelENHANCEMENTMODEPOWERMOSFET

FEATURES: *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchingCellPhones,Pagers

2N7002T

SmallSignalMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON). ●Voltagecontrolledsmallsignalswitch. ●Ruggedandreliable. ●Highsaturationcurrentcapability.

2N7002T

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002T

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. •DC-DCConverters •Powermanagementfunctions •Battery

2N7002T

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

2N7002T

N-ChannelEnhancementMOSFET