首页 >2N7002KCWQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.3A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-ChSmallSignalMOSFETwithESDProtection FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:2Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective20 | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelSMDMOSFETESDProtection Features •RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A •RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A •ESDproduction2kV(Humanbodymode) •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
N-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelMOSFET N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU |
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