2N7002DW

N-ChannelMOSFET

2N7002DW

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002DW

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

2N7002DW

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

2N7002DW

DualN-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON)

2N7002DW

SOT-363Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002DW

DualN-channel

2N7002DW

DUALN-CHANNELENHANCEMENTMODEMOSFET

2N7002DW

WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree.