2N7002DW

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002DW

60VN-ChannelEnhancementModeMOSFET

2N7002DW

60VN-ChannelEnhancementModeMOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo

2N7002DW

DualN-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002DW

N-ChannelEnhancementModeFieldEffectTransistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002DW

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

2N7002DW

N-ChannelMOSFET

2N7002DW

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363