2N7002W

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

2N7002WAX

N-CHANNELENHANCEMENTMODEMOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor

2N7002W-G

MOSFET

2N7002W-G(N-Channel) RoHSDevice Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability.

2N7002W-HF

MOSFET

Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolledsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability.

2N7002W-TP

N-ChannelEnhancementModeFieldEffectTransistor

2N7002X

MOSFET(N-Channel)

2N7002X

SOT-89-3LPlastic-EncapsulateMOSFETS

FEATURES HighdensitycelldesignforlowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability APPLICATION LoadSwitchforPortableDevices DC/DCConverter

2N7002XFB

N-CHANNELENHANCEMENTMODEFIELDMOSFET

Features •N-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •SmallSurfaceMountPackage •ESDProtectedGate,1.2kVHBM •Lead,HalogenandAntimonyFree,RoHSCompliant •GreenDevice(Notes1and2) •QualifiedtoAEC-Q1

2N7002Z

300mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002ZusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)

2N7002Z

300mA,60VN-CHANNELENHANCEMENTMODEPOWERMOSFET