| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6755 | HEXFET TRANSISTORS HEXFET TRANSISTORS JEDEC REGISTERED N-CHANNEL POWER MOSFETs 100 Volts, 0.18 Ohm HEXFET 文件:409.95 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6755 | N-Channel Power MOSFETs, 14 A, 60 A/100 V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. 文件:136.63 Kbytes 页数:5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
2N6755 | VGS Rated at 짹20V 文件:47.2 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
2N6755 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. | GESS | GESS | |
2N6755 | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | NJS 新泽西半导体 | NJS | |
2N6755 | N-Channel Power MOSFETs, 14 A, 60 A/100 V | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
75000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
100V
- Maximum Continuous Drain Current:
14A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
10000 |
询价 | |||
IR/MOT |
24+ |
TO-3 |
850 |
原装现货假一罚十 |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
850 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
2N6755 |
25+ |
100 |
100 |
询价 | |||
IR |
24+ |
TO-03 |
200 |
进口原装正品优势供应 |
询价 | ||
IR |
24+ |
TO-03 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
询价 | ||
TI |
TSSOP30 |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
询价 | |||
IR |
23+ |
TO3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
TO-3 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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