N-CHANNEL ENHANCEMENTE-MODE

Description The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low

文件：254.62 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE

文件：238.49 Kbytes 页数：6 Pages

IRF

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETs

文件：164.53 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

文件：195.04 Kbytes 页数：4 Pages

MICROSEMI

美高森美

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

文件：195.04 Kbytes 页数：4 Pages

MICROSEMI

美高森美

3.5A, 200V, 0.800 Ohm, N-Channel Power

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transis

文件：86.16 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-CHANNEL MOSFET

DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • JEDEC registered 2N6790U. • JAN, JANTX, and JANTXV qualificat

文件：688.67 Kbytes 页数：7 Pages

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MOSFET

Description: N-Channel Enhancement MOSFET

文件：112.56 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

文件：23.29 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

文件：238.72 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司