N-CHANNEL ENHANCEMENTE-MODE

Description The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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SEME-LAB

Single channel high reliability power MOSFETs

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Infineon

英飞凌

High-Reliability Transistors

This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in thru hole TO-205AF package.  Microsemi also offers numerous other transistor products to meet higher and lower power

Microchip

微芯科技