2N6676中文资料NPN Silicon Power 300V to 400V, 15A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN silicon, power, 2N6676, 2N6678, 2N6691 and 2N6693 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/538. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-3, TO-61 , TO-254AA and TO-257AA for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/538.

简介

2N6676属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6676晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。