2N6675中文资料NPN Silicon Power Speed 300V to 400V, 15A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN, silicon, power, 2N6674, 2N6675, 2N6689 and 2N6690 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for encapsulated devices as specified in MIL-PRF-19500/537. The device package outlines are a modified TO-204AD (formerly TO-3) for types 2N6674 and 2N6675 or a TO-210AC (formerly TO-61) for types 2N6689 and 2N6690.

简介

2N6675属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6675晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。