DUAL N?밅HANNEL ENHANCEMENT MODE

DESCRIPTION These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening optio

文件：41.87 Kbytes 页数：2 Pages

SEME-LAB

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

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SUTEX

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES • Switching Regulators • Converters • Motor Drivers

文件：17.09 Kbytes 页数：2 Pages

SEME-LAB

TMOS SWITCHING FET TRANSISTORS

文件：441.47 Kbytes 页数：3 Pages

MOTOROLA

摩托罗拉