PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO = -350 V • Collector Dissipation: PC (max) = 625 mW • Complement to 2N6517

文件：327.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 350V 0.5A TO92-3

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

文件：162.16 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6520 is complementary to H2N6517

文件：36.83 Kbytes 页数：3 Pages

HSMC

华昕

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

文件：130.699 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体