HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

High-Speed Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications

文件：413.1 Kbytes 页数：7 Pages

GESS

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and i

文件：56.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linearamplifier applications

文件：69.69 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linear amplifier applications

文件：111.61 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：113.19 Kbytes 页数：3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO66

文件：16.09 Kbytes 页数：1 Pages

SEME-LAB

Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66

NJS

新泽西半导体

Bipolar Junction Transistors

TT Electronics

PNP Transistor

Microchip

微芯科技

Package：TO-213AA，TO-66-2；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

MICROCHIP

微芯科技