N-CHANNEL POWER MOSFET

文件：2.48618 Mbytes 页数：8 Pages

SUNMATE

森美特

2A mps,650 Volts N-CHANNEL MOSFET

文件：201.07 Kbytes 页数：2 Pages

CHONGQING

平伟实业

Drain Current ID= 2A@ TC=25C

文件：136.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.08591 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

650V N-Channel Power MOSFET

文件：2.67418 Mbytes 页数：9 Pages

DYELEC

迪一电子

N-channel power MOS tube

文件：2.07602 Mbytes 页数：11 Pages

UMW

友台半导体

2 Amps, 650 Volts N-CHANNEL POWER MOSFET

文件：185.87 Kbytes 页数：6 Pages

UTC

友顺

2A, 650V N-CHANNEL POWER MOSFET

文件：195.58 Kbytes 页数：6 Pages

UTC

友顺

2A, 650V   N-CHANNEL   POWER MOSFET

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies • RDS(ON) = 5.5Ω @ VGS = 10V \n• Ultra Low gate charge (typical 9.0nC) \n• Low reverse transfer capacitance (CRSS = typical 5.0 pF) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

丝印：2N65；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：915.84 Kbytes 页数：7 Pages

RECTRON

丽正