2N65-CBS说明书PDF资料批发采购友顺UTC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2N65-CBS	文件：300 bytes Page：1 Pages	2.0A, 650V N-CHANNEL POWER MOSFET The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppl RDS(ON) < 9.5Ω @ VGS = 10V, ID =1.0AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;	UTC 友顺	UTC
HFD2N65S	文件：871.49 Kbytes Page：8 Pages	650V N-Channel MOSFET 文件：871.49 Kbytes 页数：8 Pages	SEMIHOW	SEMIHOW
HFU2N65S	文件：871.49 Kbytes Page：8 Pages	650V N-Channel MOSFET 文件：871.49 Kbytes 页数：8 Pages	SEMIHOW	SEMIHOW
RT2N65M	文件：137.36 Kbytes Page：4 Pages	Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION RT2N65M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=10 KΩ) ● Mini package for easy mounting APPLICATION muting circuit、 switching circuit 文件：137.36 Kbytes 页数：4 Pages	ISAHAYA 谏早电子	ISAHAYA

VGS(±V)：
±30
ID(A)：
2
RDS(ON)MAX.(mΩ)atVGS=10V：
9500
CISSTYP.(pF)：
158
COSSTYP.(pF)：
19
CRSSTYP.(pF)：
2.1
QgTYP.(nC)：
10
QgsTYP.(nC)：
4
QgdTYP.(nC)：
1.5
VGS(th)(V)MIN.：
2
VGS(th)(V)MAX.：
4
TrrTYP.(nS)：
175
QrrTYP.(nC)：
700
Package：
SOT-223_TO-220_TO-220F_TO-220F1_TO-220F2_TO-220F3_TO-251_TO-251S_TO-251S2_TO-251S4_TO-252_TO-252D_PDFN5X6

更多2N65-CBS供应商更新时间2026-10-30 9:58:00