2N6388数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

特性 Features

• High DC Current Gain -hFE=2500 (Typ) @Ic=4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
• Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
• Low Collector-Emitter Saturation Voltage-Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• T0-220AB Compact Package
• Epoxy meets UL94, VO @ 1/8 inch
• ESD Ratings Machine Model C and Human Body Model 3B
• Pb-Free Packages are Available

简介

2N6388属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6388晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。