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2N6312

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

文件:146.59 Kbytes 页数:2 Pages

ISC

无锡固电

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件:95.36 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件:95.36 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6312

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

文件:116.18 Kbytes 页数:3 Pages

SAVANTIC

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件:196.45 Kbytes 页数:4 Pages

boca

博卡

2N6312

Power Transistors

Power Transistors TO-66 Case

文件:51.32 Kbytes 页数:1 Pages

Central

2N6312

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:344.67 Kbytes 页数:2 Pages

Central

2N6312

Silicon PNP Power Transistors

文件:117.76 Kbytes 页数:3 Pages

SAVANTIC

2N6312

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.98 Kbytes 页数:1 Pages

SEME-LAB

2N6312

Bipolar Junction Transistors

TT Electronics

详细参数

  • 型号:

    2N6312

  • 制造商:

    CENTRAL

  • 制造商全称:

    Central Semiconductor Corp

  • 功能描述:

    Power Transistors

供应商型号品牌批号封装库存备注价格
24+
TO-66
10000
全新
询价
MOT/MSC
24+
TO-66
1000
原装现货假一罚十
询价
MOT/MSC
专业铁帽
TO-66
1000
原装铁帽专营,代理渠道量大可订货
询价
MOT/MSC
20+
TO-66
67500
原装优势主营型号-可开原型号增税票
询价
MOTOROLA/摩托罗拉
23+
TO-66
22200
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ASI
24+
TO-02
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
TI
QFP
6850
莱克讯每片来自原厂原盒原包装假一罚十价优
询价
25+
长期备有现货
500000
行业低价,代理渠道
询价
2000
25
询价
MOT
24+
CAN
2257
进口原装正品优势供应
询价
更多2N6312供应商 更新时间2025-12-12 10:20:00