| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6313 | POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：189.54 Kbytes 页数：4 Pages | MOSPEC 统懋 | MOSPEC | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件：132 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件：95.36 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件：95.36 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件：116.18 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：196.45 Kbytes 页数：4 Pages | BOCA 博卡 | BOCA | |
2N6313 | Power Transistors Power Transistors TO-66 Case 文件：51.32 Kbytes 页数：1 Pages | CENTRAL | CENTRAL | |
2N6313 | Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A 文件：15.18 Kbytes 页数：1 Pages | SEME-LAB | SEME-LAB | |
2N6313 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes 页数：2 Pages | CENTRAL | CENTRAL | |
2N6313 | Silicon PNP Power Transistors 文件：117.76 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
5A
- 最大工作频率：
>4MHZ
- 引脚数：
2
- 可代换的型号：
BD244A,BD540A,BD598,BD608,BD950,2N5955,2SB550,3CD81C,
- 最大耗散功率：
75W
- 放大倍数：
- 图片代号：
E-8
- vtest：
60
- htest：
4000100
- atest：
5
- wtest：
75
详细参数
- 型号：
2N6313
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
Silicon PNP Power Transistors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-66 |
10000 |
全新 |
询价 | |||
MOT/MSC |
24+ |
TO-66 |
1000 |
原装现货假一罚十 |
询价 | ||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ASI |
24+ |
TO-02 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
TI |
QFP |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
询价 | |||
25+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
MOTOROLA |
专业铁帽 |
TO-66 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
2000 |
25 |
询价 | |||||
MOT |
24+ |
CAN |
2257 |
进口原装正品优势供应 |
询价 | ||
MOT |
24+ |
CAN |
18700 |
询价 |
