| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6316 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS 文件:172.51 Kbytes 页数:4 Pages | BOCA 博卡 | BOCA | |
2N6316 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER 文件:431.63 Kbytes 页数:2 Pages | CENTRAL | CENTRAL | |
2N6316 | Power Transistors Power Transistors TO-66 Case 文件:51.32 Kbytes 页数:1 Pages | CENTRAL | CENTRAL | |
2N6316 | POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS 文件:165.62 Kbytes 页数:4 Pages | MOSPEC 统懋 | MOSPEC | |
2N6316 | Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件:131.23 Kbytes 页数:3 Pages | ISC 无锡固电 | ISC | |
2N6316 | COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66 文件:253.33 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6316 | Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件:115.22 Kbytes 页数:3 Pages | SAVANTIC | SAVANTIC | |
2N6316 | COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications. 文件:22.07 Kbytes 页数:2 Pages | SEME-LAB | SEME-LAB | |
2N6316 | Silicon NPN Power Transistors 文件:116.8 Kbytes 页数:3 Pages | SAVANTIC | SAVANTIC | |
2N6316 | NPN - Power Transistor Die 6.0 Amp, 100 Volt 文件:689.51 Kbytes 页数:5 Pages | CENTRAL | CENTRAL |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
80V
- 最大电流允许值:
7A
- 最大工作频率:
>4MHZ
- 引脚数:
2
- 可代换的型号:
BD543B,BD609,BD799,BD809,2N5428,2N5429,2N5430,3DA74B,
- 最大耗散功率:
90W
- 放大倍数:
- 图片代号:
E-8
- vtest:
80
- htest:
4000100
- atest:
7
- wtest:
90
产品属性
- 产品编号:
2N6316
- 制造商:
Microchip Technology
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 描述:
PNP TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SSI |
23+ |
TO-66 |
16800 |
进口原装现货 |
询价 | ||
SSI |
23+ |
TO-66 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
SSI |
2025+ |
TO-66 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
24+ |
TO-66 |
10000 |
全新 |
询价 | |||
MOT |
23+ |
TO-66 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT/MSC |
24+ |
TO-66 |
1000 |
原装现货假一罚十 |
询价 | ||
SSI |
24+ |
TO-66 |
2256 |
进口原装正品优势供应 |
询价 | ||
SSI |
24+ |
TO-66 |
18700 |
原装进口现货特价热卖深圳北京均可交货 |
询价 | ||
SSI |
TO-66 |
6688 |
1420 |
现货库存 |
询价 | ||
SSI |
12+ |
TO-66 |
66 |
原装正品现货,可开发票,假一赔十 |
询价 |

