| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：189.54 Kbytes 页数：4 Pages | MOSPEC 统懋 | MOSPEC | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件：132 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：196.45 Kbytes 页数：4 Pages | BOCA 博卡 | BOCA | ||
Power Transistors Power Transistors TO-66 Case 文件：51.32 Kbytes 页数：1 Pages | CENTRAL | CENTRAL | ||
Power Transistors Power Transistors TO-66 Case 文件：51.32 Kbytes 页数：1 Pages | CENTRAL | CENTRAL | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：196.45 Kbytes 页数：4 Pages | BOCA 博卡 | BOCA | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications 文件：132 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | ||
POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：189.54 Kbytes 页数：4 Pages | MOSPEC 统懋 | MOSPEC | ||
Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 5A 文件：15.17 Kbytes 页数：1 Pages | SEME-LAB | SEME-LAB | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件：95.36 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
7A
- 最大工作频率：
>4MHZ
- 引脚数：
2
- 可代换的型号：
BD543A,BD607,BD797,BD807,2N5428,2N5429,2N5430,3DA74A,
- 最大耗散功率：
90W
- 放大倍数：
- 图片代号：
E-8
- vtest：
60
- htest：
4000100
- atest：
7
- wtest：
90
产品属性
- 产品编号：
2N6315
- 制造商：
Microchip Technology
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）
- 描述：
PNP TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-66 |
10000 |
全新 |
询价 | |||
MOTOROLA |
24+ |
TO-66 |
1200 |
原装现货假一罚十 |
询价 | ||
MOT |
24+ |
CAN |
2257 |
进口原装正品优势供应 |
询价 | ||
MOT |
24+ |
CAN |
18700 |
询价 | |||
MOT |
CAN |
6688 |
7952 |
现货库存 |
询价 | ||
MOT/MSC |
专业铁帽 |
TO-66 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
25+ |
SMD |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
MOT |
23+ |
CAN |
5628 |
原厂原装 |
询价 |
