| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6050 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS 文件:195.37 Kbytes 页数:4 Pages | boca 博卡 | boca | |
2N6050 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. 文件:495.5 Kbytes 页数:2 Pages | Central | Central | |
2N6050 | POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件:188.54 Kbytes 页数:4 Pages | MOSPEC 统懋 | MOSPEC | |
2N6050 | POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar 文件:223.22 Kbytes 页数:5 Pages | COMSET | COMSET | |
2N6050 | Power Transistors Power Transistors 文件:347.98 Kbytes 页数:8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
2N6050 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件:90.89 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
2N6050 | Bipolar PNP Device in a Hermetically sealed TO3 文件:15.52 Kbytes 页数:1 Pages | SEME-LAB | SEME-LAB | |
2N6050 | isc Silicon PNP Darlingtion Power Transistor 文件:257.31 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
2N6050 | POWER COMPLEMENTARY SILICON TRANSISTORS 文件:80.97 Kbytes 页数:3 Pages | COMSET | COMSET | |
2N6050 | Package:TO-204AA,TO-3;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:POWER BJT | Microchip 微芯科技 | Microchip |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-P+Darl+Di
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
60V
- 最大电流允许值:
12A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
2
- 可代换的型号:
BDV66,BDW84A,BDX64,BDX66,BDX88A,MJ4030,TIP645,
- 最大耗散功率:
150W
- 放大倍数:
β>750
- 图片代号:
E-44
- vtest:
60
- htest:
999900
- atest:
12
- wtest:
150
产品属性
- 产品编号:
2N6050
- 制造商:
Microchip Technology
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
卷带(TR)
- 晶体管类型:
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
2V @ 24mA, 6A
- 电流 - 集电极截止(最大值):
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
750 @ 6A,3V
- 工作温度:
-65°C ~ 200°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-204AA,TO-3
- 供应商器件封装:
TO-204AA(TO-3)
- 描述:
POWER BJT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
10000 |
询价 | |||
MOTOROLA |
24+ |
TO-3 |
1000 |
原装现货假一罚十 |
询价 | ||
N/A |
24+/25+ |
77 |
原装正品现货库存价优 |
询价 | |||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
ON/安森美 |
23+ |
TO-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MOTO |
23+ |
5000 |
专注配单,只做原装进口现货 |
询价 | |||
MOTOROLA/摩托罗拉 |
2402+ |
-2 |
8324 |
原装正品!实单价优! |
询价 | ||
Microchip Technology |
25+ |
TO-204AA TO-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
CENTRALSEMI |
24+ |
NA |
3200 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 |

