2N6035数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

特性 Features

• High DC Current Gain -hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
• Forward Biased Second Breakdown Current CapabilityIS/b = 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication
• Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package
• Pb-Free Packages are Available

简介

2N6035属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6035晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。