2A, 600V N-CHANNEL  POWER MOSFET

The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli • RDS(ON) = 5Ω@VGS = 10V \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

N-CHANNEL POWER MOSFET

文件：304.09 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.21513 Mbytes 页数：8 Pages

SUNMATE

森美特

600V N Channel Power MOSFET -

FEATURES ● RDS(ON)

文件：164.05 Kbytes 页数：7 Pages

JINGHENG

晶恒

600V N Channel Power MOSFET -

FEATURES ● RDS(ON)

文件：164.05 Kbytes 页数：7 Pages

JINGHENG

晶恒