2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli • RDS(ON) < 4.2Ω@VGS=10V \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

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N-CHANNEL POWER MOSFET

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2A, 600V N-CHANNEL  POWER MOSFET

The UTC  2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This  power MOSFET is usually used at high speed switching applications in power sup

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2.0A, 600V   N-CHANNEL  POWER MOSFET

The UTC 2N60-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppl RDS(ON) < 8.5Ω @ VGS = 10V, ID =0.75AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

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