isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

文件：54.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

文件：130.35 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

文件：115.94 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：117.52 Kbytes 页数：3 Pages

SAVANTIC

Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-66

NJS

新泽西半导体

Package：TO-213AA，TO-66-2；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

MICROCHIP

微芯科技