Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

文件：132.18 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEo(sus)=-100V(Min) • Complement to Type 2N5620 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

文件：71.17 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

文件：111.36 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：112.94 Kbytes 页数：3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed to3 Metal Package.

文件：11.29 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-3

NJS

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技