EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

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KEC(Korea Electronics)

丝印：F0；Package：SOT-23；High Voltage Transistors

High Voltage Transistors FEATURE • Pb-Free package is available.

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EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.37 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.37 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nHIGH VOLTAGE APPLICATION.FEATURES\n• High Collector Breakdwon Voltage\n   : VCBO=160V, VCEO=140V\n• Low Leakage Current.\n   : ICBO=100nA(Max.) VCB=100V\n• Low Saturation Voltage\n   : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA\n• Low Noise : NF=10dB (Max.) • High Collector Breakdwon Voltage\n   : VCBO=160V, VCEO=140V\n• Low Leakage Current.\n   : ICBO=100nA(Max.) VCB=100V\n• Low Saturation Voltage\n   : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA\n• Low Noise : NF=10dB (Max.);

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TRANSISTOR:High Volatage

First Silicon