Power Transistors

Power Transistors

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Silicon NPN Power Transistors

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A • DC Current Gain- : hFE= 25-100 @IC= 2.5A • Complement to Type 2N4904 APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits.

文件：40.5 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4904/4905/4906 • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

文件：111.99 Kbytes 页数：3 Pages

SAVANTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

文件：63.91 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：494.38 Kbytes 页数：2 Pages

CENTRAL

SILICON EPITAXIAL NPN TRANSISTOR

文件：187.85 Kbytes 页数：3 Pages

SEME-LAB

Silicon NPN Power Transistors

文件：113.57 Kbytes 页数：3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：11.28 Kbytes 页数：1 Pages

SEME-LAB

87.5W NPN High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

Trans GP BJT NPN 40V 5A 3-Pin(2+Tab) TO-3 Sleeve

NJS