POWER TRANSISTORS(1A,80V,25W)

NPN SILICON TRANSISTORS ... designed for driver circuits, switching and amplifier applications. FEATURES * Low Collector-Emitter Saturation Voltage VCE(sat)=0.6 V (Max.) @ Ic = 1.0 A * Excellent Safe Operating Area * Gain Specified to Ic = 1.0 Amp. * Complement to PNP 2N499.

文件：188.46 Kbytes 页数：4 Pages

MOSPEC

统懋

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A • Wide Area of Safe Operation • Complement to Type 2N4900 APPLICATIONS • Designed for driver circuits, switching and amplifier application

文件：57.16 Kbytes 页数：2 Pages

ISC

无锡固电

MEDIUM-POWER NPN SILICON TRANSISTORS

Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.

文件：188.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

Central

SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available

文件：88.72 Kbytes 页数：3 Pages

TTELEC

SILICON EPITAXIAL NPN TRANSISTOR

文件：88.72 Kbytes 页数：3 Pages

SEME-LAB

Silicon NPN Power Transistors

文件：118 Kbytes 页数：3 Pages

SAVANTIC

25W NPN Medium Power BJT Transistor

This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

Trans GP BJT NPN 80V 1A 3-Pin(2+Tab) TO-66 Sleeve

NJS