EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ● Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. ● Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. ● Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. ● Complementary

文件：662.97 Kbytes 页数：5 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor

Comchip

典琦

NPN General Purpose Amplifier

文件：98.24 Kbytes 页数：5 Pages

MCC

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

文件：175.07 Kbytes 页数：7 Pages

Fairchild

仙童半导体

NPN General - Purpose Amplifier

Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

文件：329.69 Kbytes 页数：9 Pages

ONSEMI

安森美半导体