POWER TRANSISTORS (NPN SILICON)

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

文件：204.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

文件：80.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

HIGH POWER NPN SILICON POWER TRANSISTORS

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

文件：138.85 Kbytes 页数：3 Pages

BOCA

博卡

NPN POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3771, 2N3772 types are silicon NPN silicon power transistors manufactured by the epitaxial base process designed for high power amplifier and switchign applications.

文件：82.5 Kbytes 页数：1 Pages

CENTRAL

POWER TRANSISTORS(150W)

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

文件：132.38 Kbytes 页数：3 Pages

MOSPEC

统懋

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Power Silicon Power Transistor VCEO 60V, IC 20A, 150W, TO-3

Features Forward Biased Second Breakdown Current Capability 2N3772 -- Is/b = 2.5 A DC @ V CE = 60 V DC APPLICATIONS: Linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Description Silicon High Power Transistor, NPN, 60V, 20A

文件：2.30786 Mbytes 页数：5 Pages

MULTICOMP

易络盟

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain-hFE=15(Min)@IC = 15A • Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS • Designed for linear amplifiers, series pass regulators, and inductive switching applications.

文件：47.99 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-POWER NPN SILICON TRANSISTOR

HIGH-POWER NPN SILICON TRANSISTOR

文件：140.16 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH POWER NPN SILICON TRANSISTOR

DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ■ STMicroelectronics PREFERRED SALESTYPES

文件：64.87 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体