Medium Power PNP Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

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MICROSEMI

美高森美

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

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CENTRAL

Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

CENTRAL

MEDIUM POWER PNP TRANSISTORS

文件：234.41 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO66

文件：15.18 Kbytes 页数：1 Pages

SEME-LAB

PNP SILICON POWER TRANSISTOR

文件：430.55 Kbytes 页数：2 Pages

CENTRAL

SILICON PNP POWER TRANSISTORS

文件：339.27 Kbytes 页数：2 Pages

CENTRAL

isc Silicon PNP Power Transistor

文件：265.76 Kbytes 页数：2 Pages

ISC

无锡固电

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Central

Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66

NJS