NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Bipolar NPN Device in a Hermetically sealed

文件：14.66 Kbytes 页数：1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed

文件：15.42 Kbytes 页数：1 Pages

SEME-LAB

NPN Silicon Power 60V to 80V, 3A

This specification covers the performance requirements for NPN, silicon, 2N3418, 2N3419, 2N3420 and 2N3421 transistors for use in medium power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/393 a

Microchip

微芯科技

Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-39

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

MICROCHIP

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A TO39

MICROCHIP

微芯科技