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2N35

GENPNLO-PWRBJT

Description:GeNPNLo-PwrBJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP2N35

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP2N35

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP2N35

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP2N35

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP2N35

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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